? 2005 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 500 v v dgr t j = 25 c to 175 c; r gs = 1 m 500 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c36a i dm t c = 25 c, pulse width limited by t jm 108 a i ar t c = 25 c36a e ar t c = 25 c50mj e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 p d t c = 25 c 540 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c maximum tab temperature for soldering 260 c for 10s m d mounting torque(to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 5 g plus220 2 g g = gate d = drain s = source tab = drain ds99364d(10/05) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 4 ma 500 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 170 m pulse test, t 300 s, duty cycle d 2 % polarhv tm hiperfet power mosfet advance technical information n-channel enhancement modeavalanche rated fast intrinsic diode features z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixfh 36n50p ixft 36n50p ixfv 36n50p ixfv 36n50ps v dss = 500 v i d25 = 36 a r ds(on) = 170 m to-247 ad (ixfh) (tab) to-268 (ixtt) g s d (tab) g s d plus220 (ixfv) d (tab) g s d (tab) plus220smd (ixfv...s)
ixys reserves the right to change limits, test conditions, and dimensions. IXFH36N50P ixft 36n50p ixfv 36n50p ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 36 s c iss 4770 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 510 pf c rss 58 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 27 ns t d(off) r g = 18 (external) 75 ns t f 21 ns q g(on) 134 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 29 nc q gd 64 nc r thjc 0.23 k/w r thck (to-247) 0.21 k/w (plus220) 0.21 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 36 a i sm repetitive 108 a v sd i f = i s , v gs = 0 v, 1.5 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 22a, 250 ns q rm -di/dt = 100 a/ s 0.8 c i rm v r = 100v 8.0 a to-247 ad (ixfh) outline terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 (ixtt) outline l l3 l2 l1 a1 e1 e d1 e b d c a2 a a3 l4 terminals: 1 - gate 2 - drain 3 - source tab - drain e e1 d l2 a a1 l1 l l3 e 2x b c a2 l4 a3 e1 plus220smd (ixfv__s) outline
? 2005 ixys all rights reserved fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12141618 202224 v d s - volts i d - amperes v gs = 10v 8v 5.5v 5v 6v 6.5v 7v fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 28 32 36 0246 810121416 v d s - volts i d - amperes v gs = 10v 7v 6v 4.5v 5v 5.5v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 28 32 36 01234567 v d s - volts i d - amperes v gs = 10v 8v 7v 5v 6v 5.5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 36a i d = 18a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.6 1 1.4 1.8 2.2 2.6 3 3.4 0 10 20304050 607080 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v IXFH36N50P ixft 36n50p ixfv 36n50p
ixys reserves the right to change limits, test conditions, and dimensions. IXFH36N50P ixft 36n50p ixfv 36n50p ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 q g - nanocoulombs v g s - volts v ds = 250v i d = 18a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 4 4.5 5 5.5 6 6.5 7 v g s - volts i d - amperes t j = 125oc 25oc -40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 102030405060708090 i d - amperes g f s - siemens t j = -40oc 25oc 125oc fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100 s 1ms dc t j = 150oc t c = 25oc r ds(on) limit 10ms 25 s
? 2005 ixys all rights reserved fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0. 1 1 10 100 1000 pulse width - milliseconds r ( t h ) j c - o c / w IXFH36N50P ixft 36n50p ixfv 36n50p advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. ixys reserves the right to change limits, test conditions, and dimensions without notice.
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